28 December 2023
RF sputtering of gallium oxide on diamond
Researchers claim the first hetero-epitaxial growth of β-Ga2O3 thin films on single-crystal diamond (111) wafers using RF magnetron sputtering.
28 December 2023
Status of the IP competition for vertical gallium nitride power devices
China has taken over leadership from Japan in vertical GaN inventive activity, notes KnowMade.
28 December 2023
Extracting efficiency contributions for sub-10μm LEDs
Opposing trends in LEE and IQE affect the optimum size for maximum EQE.
28 December 2023
Determining droop in green InGaN LEDs
Researchers in the USA find an imbalance between radiative recombination and intrinsic Auger–Meitner recombination in green indium gallium nitride LEDs.
28 December 2023
Fully in-situ roughening for ultrathin III–V solar cells
Increased light trapping boosts short-circuit current by 5%.
28 December 2023
First droplet epitaxy of InAs quantum dots on InGaAsP quaternary alloy
Light emission spans the low-loss C-band as well as other important telecom optical-fiber wavelengths.
6 November 2023
Germanium–tin MQW LEDs on 12-inch silicon substrate
Researchers claim the largest-diameter wafer so far opens way to mass production.
6 November 2023
Recessing metal contacts for gallium nitride transistors
Researchers in Sweden have achieved low ohmic contact resistance together with low annealing temperature.